| 摘要 |
A semiconductor device has a metal pattern composed of a material reacting on water and a metal protective film formed between an intrusion path of water and the metal pattern on the surface of a part of the metal pattern. The metal pattern is composed of a refractory metal, a refractory metal compound or aluminum, and the metal protective film is formed of any of gold, platinum, palladium, gold alloy, platinum alloy, palladium alloy and lanthanum hexaboron.
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