| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable an IC housing package to be plated efficiently. SOLUTION: An IC housing package successively subjected to electroless Ni-B plating (process 12) and sintering (process 14) is dipped into an etchant (process 16). At this point, tungsten particles exposed on a high-dielectric layer at the edge face and corners of the IC housing package are less in amount than those exposed on a metallized layer, so that the tungsten particles can be removed through etching. Through this process, an Ni plating layer can be prevented from being formed on the high dielectric layer on the edge face and corners in an after Ni electroplating process 24. Consequently, since a normal process where an Ni-plating layer is removed form an edge face and corners by polishing can be dispensed with, a plating operation can be enhanced in efficiency.</p> |
