| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing plasma etching chamber, on which the magnetic field which is formed for induction of a wafer of plasma gas formed by high frequency (RF) energy, is stabilized and the bias of plasma toward a specific part can be prevented. SOLUTION: Magnet coils 12, with which a magnetic field is generated for induction of plasma gas formed in a chamber 10 through high frequency energy, are provided on the outer wall of the chamber 10, a cable 14 with which a current is applied to the magnet coil 12 is connected to the magnet coil 12 via an insulating plastic bracket 20 provided on the outer wall of the chamber 10. Also, a coupling nut 22 is provided on the end of the cable 14, and a coupling screw part 24 with which the coupling nut 22 is screw tightened is provided on the bracket 20. Furthermore, an extension nut 26 which prevents disconnection of wire of the cable 14 through friction is provided on the coupling nut 22.</p> |
