| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory provided with a word line decoder which can drive a word line by both of word line voltage being higher than power source voltage and word line voltage being lower than power source voltage. SOLUTION: This device is provided with a word line, a bit line, a memory cell connecting the word lines and the bit line, a word line driving circuit 220 driving the word line by word line voltage supplied in accordance with a cut off signal, and a circuit generating the cut off signal during the above plural operation modes. The cut off signal generating circuit generates a cut off signal having power source voltage when word line voltage is higher than power source voltage, and generates a cut off signal having word line voltage when the word line voltage is lower than power source voltage.</p> |
