发明名称 Red semiconductor laser of low beam divergence
摘要 This invention is a new type of GaInP/AlGaInP for a visible separate-confinement-heterostructure strained quantum well(SCH-S-QW) laser with passive wave guides in the cladding layers. By using this structure, we can significantly improve the transverse beam divergence with only a slight increase of the threshold current. With proper choice of parameters, the transverse beam divergence as narrow as 18 DEG . FWHM can be achieved while the threshold current only becomes 1.12 factor than the lasers without the passive waveguide structure. This type of structure has three advantages: (1) It increases the spectrum dissolution rate between the laser and its optic element to increase the efficiency in actual operation. (2) Smaller oval ratio makes the light beams appears circular, and avoids the problem of non-paralleled focusing in optical instruments. It also eliminates cumbersome non-paralleled focusing in traditional GaInP/AlGaInP, and is more cost efficient. (3) This structure expands the resonation cavity in the optic field. Thus, it can reduce the effect of COD, prolongs the laser's life cycle as a result, while also enhances the maximum output efficiency. Therefore, the visible laser of the separate-confinement-heterostructure, strained quantum-well found in this vertical consolidated passive waveguide structure has many advantages that can be used as a basis for laser development.
申请公布号 US5923689(A) 申请公布日期 1999.07.13
申请号 US19980010848 申请日期 1998.01.22
申请人 NATIONAL SCIENCE COUNCIL 发明人 SU, YAN-KUIN;LI, WEN-LIANG;CHANG, SHOOU-JINN;TSAI, CHIN-YAO
分类号 H01S5/32;H01S5/323;H01S5/34;(IPC1-7):H01S3/19;G02B6/10 主分类号 H01S5/32
代理机构 代理人
主权项
地址
您可能感兴趣的专利