| 摘要 |
A device for the reading of cells for a memory includes a high-gain current comparison circuit, including a first arm for the reproduction, by current mirror, of the reference current conducted by a reference cell and a second arm for the reproduction, by current mirror, of the read current of a selected memory cell. A current mirror structure is provided to reproduce the current of the first arm in the second arm so as to obtain the comparison and produce a representative voltage level at output.
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