发明名称 Plasma processing method and apparatus
摘要 A plasma processing method and apparatus, wherein evaluation is effected while a suitable gas is introduced into a vacuum vessel, and then a high frequency voltage is applied by a high frequency discharge coil power source to a spiral discharge coil while the interior of the vacuum vessel is kept under adequate pressure, whereby a high frequency magnetic field is generated within the vacuum vessel through a dielectric plate so that electrons are accelerated by an induction field due to the high frequency magnetic field to generate plasma within the vacuum vessel for processing a substrate, characterized in that the dielectric plate is heated by a planar heater to 80 DEG C. or more, whereby the thickness of a thin film to be deposited on the dielectric plate is substantially reduced thereby to inhibit dust generation and thus substantially reduce the frequency of maintenance required for the dielectric plate. The apparatus includes a ceramic plate formed with a discharge coil fixing groove and mounted on the dielectric plate, and the planar spiral discharge coil is mounted on the ceramic plate.
申请公布号 US5922223(A) 申请公布日期 1999.07.13
申请号 US19960749847 申请日期 1996.11.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 OKUMURA, TOMOHIRO;HARAGUCHI, HIDEO;NAKAYAMA, ICHIRO;YANAGI, YOSHIHIRO
分类号 H01J37/32;(IPC1-7):B23K10/00 主分类号 H01J37/32
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