摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a sensor having a heating-type thin-film element, in which protrusion of silicon substrate underneath a rib- shaped heating-type thin-film element is prevented. SOLUTION: A lower side insulating film 105 is formed on a front surface 103 of a silicon substrate 101. Atop the lower side insulating film 105, a conductive film 106 containing a heating member is formed, and an upper side insulating film 107 is formed to cover the conductive film 106. In this state, anisotropic etching is performed from the backside of the silicon substrate 101 to form a cavity member 102 underneath the heating member. After the cavity member 102 has been formed, a rib-shaped heating-type thin-film element 104 is formed by removing the part of the lower side insulating film 105 that is exposed at the cavity member 102, except for the part that supports the conductive film 106.</p> |