发明名称 EXCHANGE COUPLING FILM, MAGNETORESISTANCE EFFECT ELEMENT USING THIS EXCHANGE COUPLING FILM AND THIN-FILM MAGNETIC HEAD USING THE MAGNETORESISTANCE EFFECT ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an exchange coupling film, formed such that when an antiferromagnetic material containing an element (X) ((X) is a platinum group element.) and an element Mn is used as an antiferromagnetic layer, a large exchange anisotropic magnetic field can be generated, and a magnetoresistance effect element using the exchange coupling film. SOLUTION: An exchange coupling film is formed such that an antiferromagnetic layer 4 is formed of an X-Mn ((X) is a platinum group element.) layer and the compositional ratio of the (X) is regulated properly, whereby the interfacial structure between the layer 4 and a fixed magnetic layer 3 is put in a non-aligned form, and in the state, the layer 4 is subjected to heat treatment, whereby the crystal structure of the layer 4 is transformed so that a large exchange anisotropic magnetic field can be obtained. Thereby, it is possible to further improve the regenerating characteristics of the exchange coupling film in comparison with those of the conventional methods.
申请公布号 JPH11191647(A) 申请公布日期 1999.07.13
申请号 JP19980236801 申请日期 1998.08.24
申请人 ALPS ELECTRIC CO LTD 发明人 HASEGAWA NAOYA;SAITO MASAJI;OMINATO KAZUYA;YAMAMOTO YUTAKA;MAKINO TERUHIRO
分类号 G01R33/09;G11B5/39;H01F10/30;H01F10/32;H01L43/08;H01L43/10;(IPC1-7):H01L43/08 主分类号 G01R33/09
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