发明名称 |
MOS field effect transistor and its manufacturing method |
摘要 |
A method of manufacturing a MOS field effect transistor comprises forming on a semiconductor substrate a first epitaxial growth layer having an impurity doping concentration lower than that of the semiconductor substrate, forming on the first epitaxial growth layer a second epitaxial growth layer having an impurity concentration higher than that of the first epitaxial growth layer and having a thickness equal to or less than a diffusion depth of a source and a drain region, and forming on the second eptiaxial growth layer a third epitaxial growth layer having an impurity concentration lower than that of the second epitaxial growth layer and having a thickness equal to or less than that of a depletion layer at a channel region.
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申请公布号 |
US5923985(A) |
申请公布日期 |
1999.07.13 |
申请号 |
US19970782975 |
申请日期 |
1997.01.14 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
AOKI, KENJI;TAKADA, RYOJI |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/336;H01L21/20 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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