| 摘要 |
PROBLEM TO BE SOLVED: To surely reduce interface level density without change in an area of cell plate electrode by providing a slit or a hole to the cell plate electrode, to which an upper electrode is coupled by covering a lower electrode via a capacitor insulating film. SOLUTION: A second interlayer insulating film 9 consisting of silicon oxide film is deposited, a capacitor contact hole 10 is formed, and a lower electrode consisting of polycrystalline silicon film is formed on an n-type diffused layer 5 via the contact hole 10. Next, a capacitor insulating film 12 is formed as the composite film of the silicon nitride film and silicon oxide film, a polycrystal line silicon film is deposited and a cell plate electrode 13A having a slit 14, for example of 0.4 μm×2 μm is formed by unisotropic dry etching process. Distance between the desired position of cell plate electrode and edge end thereof is set in parallel to the conductor substrate, for example, at 100 μm or less, thereby providing a hole of desired shape in place of such a slit. |
