| 摘要 |
PROBLEM TO BE SOLVED: To provide an abrasive used to polish semiconductor silicon wafers, the main ingredient of which is a silica-containing abrasive and which efficiently prevents metal contamination, in particular, copper contamination, in the wafers during the polishing, and furthermore enables to enhance the polishing rate, by adding inorganic oxoacid compound(s) to the abrasive. SOLUTION: Inorganic oxoacid compound(s), such as silicate compound(s) or aluminate compound(s) is (are) added to a silica-containing abrasive. Under a polishing condition, sample wafers are polished using a polishing machine, and the polishing rate is measured by changing the added amount of sodium silicate, of sodium aluminate, and of an amine, to the colloidal-silica-containing abrasive to specified concentrations, respectively. The obtained result indicates that, by just adding a small amount of sodium silicate or of sodium aluminate, the polishing rate increases remarkably as compared to the case of not adding them, yielding the effect that is equal to or more than that in the case of adding the amine. |
