| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which suppresses a p-type impurity doped in a p-type AlGaInP clad layer from diffusing into an active layer to avoid deteriorating the characteristics. SOLUTION: An AlGaInP semiconductor light emitting element has a p-type Alz Ga1-z As layer 13 doped at a high concn. with a p-type impurity harder to diffuse than Zn or Mg, for example, C between an active layer 4 and p-type (Alx Ga1-y ,y In1-y P layer doped with a p-type impurity Zn or Mg. The p-type Alz Ga1-z As layer 13 has a thickness of 0.05-0.3 μm and doping concn. of the p-type impurity is 2×10<17> -2×10<19> cm<-3> . The active layer 4 has an MQW structure having an undoped GaInP quantum well layer and undoped AlGaInP barrier layer or having an undoped GaInP quantum well layer and p-type AlGaAs barrier layer doped with a p-type impurity such as C which is hard to diffuse. |
