| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation detection element array at low cost which has a radiation-sensitive layer with a large area formed under an optimum film formation condition. SOLUTION: A semi-insulating compound semiconductor film 4 of CdTe, CdZnTe, GaAs, HgI2 or the like is formed by a vapor phase film formation method such as CVD or a vapor deposition on a front face of a hard conductive flat plate 1 of Si or the like, which has an electrode 3 formed on the front and the rear faces or only on the rear face. Thereafter, a plurality of signal lead-out electrodes 5 are formed on the semi-insulating compound semiconductor film 4, which is cut to a predetermined size. A radiation detection element array chip 6 is thus obtained.
|
