| 摘要 |
<p>PROBLEM TO BE SOLVED: To attain high speed reading and low voltage program operation by increasing Vth shift amounts without deteriorating a writing erasing speed and data holding characteristics. SOLUTION: This device includes a gate insulating film 6 between a channel formation area 1a and a gate electrode 20, tunnel insulating film 10 in the gate insulating film, and plural small particle diameter conductors 14 flatly or spatially made discrete on the tunnel insulating film as a charge storing means. Each small particle diameter conductor 14 is obtained as a bi-polar trap in a state in which an electron is stored, a state in which a hole is stored, and a neutral state in which neither the electron nor the hole is stored at the time of writing erasing. At least, the part brought into contact with the small particle diameter conductors of the tunnel insulating film 10 is composed of silicon nitride and oxide. Also, at least the part brought into contact with the gate insulating film of the gate electrode 20 is made of semiconductor materials in the same conductive type as the channel formation area 1a.</p> |
