| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily dry etching an inverted mesa structure. SOLUTION: Ions (containing radicals) 17 are made to fall on the surface of a semiconductor wafer 10 at an angle of incidenceθ. Then, this wafer 10 is revolved around the central axis 16 of a cavity formed in the wafer 10. Whereupon, dry-etched surface 15 which has an inverted mesa type notch can be formed on the surface of the wafer 10.
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