| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a bottom gate type thin-film transistor which is capable of being protected from adverse effects of external charge, to thereby improve its reliability. SOLUTION: A thin-film semiconductor device includes an insulating substrate 1, and a thin-film transistor 3 integrally formed on the substrate. The transistor 3 has a bottom gate structure, which has a gate electrode 5, a gate insulating film 4, a semiconductor thin film 2 and an interlayer insulating film 9 sequentially formed as laminated from its bottom. The semiconductor thin film 2 of the transistor 3 has a channel region 20 facing opposite to the gate electrode 5, and source and drain regions 7 and 8 are positioned at both sides of the channel region 20. A conductor film 10S is formed on a part of the interlayer insulating film 9 overlapped with the channel region 20, so that the channel region 20 is electrically shielded from the exterior.</p> |
