| 摘要 |
PROBLEM TO BE SOLVED: To ensure satisfactory dry etching resistance, suitability to a standard developer and excellent adhesion to a substrate and to prevent defective development and cracking by incorporating a resin which increases its alkali solubility when decomposed by the action of an acid and contains a polymer contg. specified repeating units. SOLUTION: The photoresist compsn. contains a resin which increases its alkali solubility when decomposed by the action of an acid and contains a polymer contg. repeating units represented by formula I or II. In the formulae I and II, R1 -R16 may be the same or different and are each H, alkyl which may have a substituent, halogen, cyano, -COOH, -COeO-R31 (R31 is alkyl or cycloalkyl), a group which is decomposed by the action of an acid, -C(=O)-O-A- R18 or -C(=O)-X2 -A-R18 , m/n is 1/9 to 9/1, min and p+q are each 10-100, (p) and (q) are each 0-100, X. is a divalent combining group such as S and R18 is H, alkyl or the like. |
