| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve writing characteristics at the time of writing a charge (electron) in a floating gate. SOLUTION: This is a non-voltage semiconductor storage device provided with a memory cell array in which plural flash memory cell transistors constituted of a floating gate 4, control gate 6, drain area 7, source area 8, an channel area are arranged, and a method for writing the non-volatile semiconductor storage device for writing a charge (electron) in the floating gate 4 by hot electrons. At the time of allowing writing currents to flow to the selected flash memory cell transistor, the writing currents are allowed to flow through a non-selected flash memory cell transistor adjacent to the flash memory cell transistor 7.</p> |
