| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a reflection electrode self-alignedly by a method, wherein a drain region is extended and formed into the shape of a display pixel electrode, and silver or a silver alloy is formed on at least the drain region. SOLUTION: An interlayer insulation layer 5 is deposited on a substrate 1, and an opening part 6 is formed on its gate electrode 2 and its source electrode 4. It is patterned to be an active layer 7 for depositing a silicon thin film, and a source region and a drain region 8 where impurity ions are implanted on the active layer 7, and a channel region 9 positioned in a region upward of the gate electrode 2 where impurities are not introduced are formed. A planting layer 10 consisting of silver is formed on the surface of the exposed source region and drain region 8 by a plating method. Since the plating layer 10 is formed directly on the drain region 8 formed by a semiconductor thin film 7, a reflection electrode can be formed self-alignedly.</p> |
