| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device capable of being highly integrated, while ensuring the constant capacity of a capacitor and to provide a method for manufacturing the same. SOLUTION: A semiconductor device has a memory cell region and a peripheral circuit region. An insulating film 59, having an upper surface extending from the memory cell region to the peripheral circuit region is formed on the major surface of a semiconductor substrate 1. Within the memory cell region, a capacitor lower electrode 170a is formed on the major surface of the semiconductor substrate 1, in such a way that it extends higher than the upper surface of the insulating film 59. A capacitor upper electrode 150 is formed on the capacitor lower electrode 170a via a dielectric film 150 in so that it extends on the upper surface of the insulating film 59. The capacitor lower electrode 170a includes a part of a capacitor lower electrode having a top 301 and a bottom 302. The upper surface of the insulator 59 is positioned between the top 301 and the bottom 302 of the part of capacitor lower electrode. |
