| 摘要 |
PROBLEM TO BE SOLVED: To continuously form each layer by a method, wherein when a thin film is formed on a conductive base material through irradiation by electron beams, in case an n-type amorphous silicon is formed, phosphorus for doping is added to a raw material silicon, and in case a p-type amorphous silicon is formed, boron for doping is added thereto. SOLUTION: An amorphous silicon layer 24 of three layers (an n-type layer, an i-type later, a p-type layer) is sequentially laminated on a first electrode 22 by an ion plating method. When amorphous silicon layer is formed, phosphorus is added to a pulverized matter of a silicon raw material in the n-type layer, and only the silicon raw material is used in the i-type layer, and boron is added to the silicon raw material in the p-type layer, and then they are placed in a crucible and is irradiated with inactive gas plasma of argon, etc. Ionization of produced vapor-deposited particles is made by inactive gas excited between a vapor-deposited source and a substrate, reactive plasma and electron beams. Switching of the n, i and p-type layers can be performed continuously by replacing the crucible. |
