| 摘要 |
PROBLEM TO BE SOLVED: To conveniently form a laser device which provides high-reliability stable characteristics and simply emits laser beams with different wavelengths. SOLUTION: This the step of A first A1203 film layer 12 is formed at 130 deg.C by sputtering, on resonator end faces of a GaAs laser element substrate 10, and the thickness is controlled to be an optical film thickness ofλ/16 A secondα-Si:H film layer 14 is formed at 200 deg.C by sputtering with the thickness control to provide an optical film thickness ofλ/8. A third A1203 film layer 16 is formed at 130 deg.C by sputtering with the thickness control to provide an optical film thickness ofλ/16. Then a fourthα-Si:H film layer 18 is formed at 200 deg.C by sputtering with the thickness control to provide an optical film thickness ofλ/8, and a fifth A1203 film layer 20 is formed at 130 deg.C by sputtering with the thickness control to provide an optical film thickness ofλ/16.
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