| 摘要 |
PROBLEM TO BE SOLVED: To suppress the resistivity of a p-type layer low, to reduce an electric loss and to improve a light-emitting efficiency, by forming a p-type semiconductor layer by doping impurities including at least two kinds of impurities having a deep level and an impurity having a shallow level. SOLUTION: A light-emitting part 10 has a double heterojunction type and is comprised of a light-emitting layer 2 being put between an n-type layer 1 and an n-type layer 3. A p-type layer 3 is formed by doping impurities including at least two kinds of impurities having a deep level and an impurity having a shallow level. The p-type layer 3 uses a p-type layer including a region in which different impurities are doped (intentionally added). At least two kinds of impurities which are doped are different in levels to be formed. One is an impurity forming a deep impurity level and another is an impurity forming a more shallow acceptor level. |
