| 摘要 |
PROBLEM TO BE SOLVED: To block a reactive current of an optical transmitting member while maintaining optical coupling between a light emitting part and an optical transmitting path highly effective by setting a reactive power region of a mode conversion region of an optical waveguide part not exceeding a specified ratio of a length in a proceeding direction of light. SOLUTION: After a mask for crystal growth is formed all over an upper part of an n-type InP semiconductor board 11, a semiconductor lamination body 13 and a p-type InP clad layer are formed. A current constriction layer 15 is formed by ion implantation of titanium to a p-type InP clad layer of a thick taper region. Thereafter, a mask is removed and a p-type InP clad layer 16 and a p-type Inlays 17 are formed. Then, a silicon oxide film 18 is formed all over a substrate. After a wafer surface is flattened by polyimide resin, a silicon oxide film window is formed in an upper surface of a ridge. Lastly, after electrodes 20, 21 are formed, a rear edge face is coated with a reflection film 22. Meanwhile, a reactive current generation region of a mode conversion region wherein a material lamination 13 which becomes an optical waveguide gets thin in a projection direction of light is made at most half a length in a proceeding direction of light. |
