发明名称 PHASE SHIFT PHOTOMASK BLANK AND PRODUCTION OF PHASE SHIFT PHOTOMASK AS WELL AS METHOD FOR CONTROLLING SIDE ETCHING QUANTITY
摘要 PROBLEM TO BE SOLVED: To improve the sectional shape of the phase shift films of a phase shift photomask blank composed of single layer or multiple layers of the phase shift films and phase shift photomask and to improve the line width control of circuit patterns. SOLUTION: The phase shift photomask blank consisting of the single layer or multiple layers of the phase shift films and phase shift photomask are produced by sputtering a molybdenum silicide target by gases consisting of inert gas and reactive gases on a transparent substrate. At this time, the gases which are formed by adding oxygen, nitrogen or a mixture composed of the oxygen and the nitrogen to a nitrogen oxide and are adjusted in the addition ratios thereof are used as the reactive gases.
申请公布号 JPH11184063(A) 申请公布日期 1999.07.09
申请号 JP19970357616 申请日期 1997.12.25
申请人 ULVAC SEIMAKU KK 发明人 KAWADA SUSUMU;YAMADA FUMIHIKO;AMANO JUN
分类号 C23C14/34;G03F1/26;G03F1/68;G03F1/80 主分类号 C23C14/34
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