| 摘要 |
PROBLEM TO BE SOLVED: To obtain a technique whereby from the production of a BEEM measuring (ballistic electron emission microscopy) sample to the BEEM observation can be controlled wholly and a BEEM current of an MS junction or MIS junction can be correctly and easily measured, evaluated with a nanometric space resolution. SOLUTION: The BEEM measuring apparatus has a BEEM sample-forming means 6 forming a metallic film directly or via an intermediate layer on a semiconductor substrate held by a sample holder under a vacuum ambience, a BEEM means 7 measuring a BEEM current flowing from the metallic film to the semiconductor substrate under the vacuum ambience, a transfer path 1 where the semiconductor substrate having the metallic film is transferred from the BEEM sample-forming means 6 to the BEEM means 7 under the vacuum ambience, and a means fixing the sample holder to a BEEM holder in the transfer path 1 and also electrically connecting a BEEM current measuring electrode to each of the metallic film and semiconductor substrate. From the BEEM sample-forming means 6 to the BEEM means 7 through the transfer path 1 is maintained in the vacuum ambience of not higher than 1×10<-7> Pa.
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