| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a CSP structure whose productivity is made high, whose quality is made stable, and whose reliability is made high, and a method for manufacturing this device. SOLUTION: An IC integrated circuit 1 is fixed to a circuit board 2 by using a die bond material 3, an electrode 4 on the IC integrated circuit 1 is electrically connected through a metallic wire 7 with a first electrode 5 on the circuit board 2, and first and second solder bumps 8a and 8b are provided as the outside terminal of a resin sealed semiconductor package in a semiconductor device in a CSP structure. At the time of transfer molding using a die, the first solder bump 8a is resin-sealed so as to be brought into contact with a die 12 for sealing so that the first solder bump 8a can be exposed on the surface of sealing resin 9. Then, the second solder bump 8b is joined to the exposed first solder part 8a so that the outside terminal of a semiconductor package can be formed.</p> |
