METHOD FOR FORMING THIN FILM IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a thin film in a semiconductor device. SOLUTION: A semiconductor substrate 200 is fixed to the platen of a physical vapor deposition system and coolant is pumped in the platen at a temperature of 50 deg.C or below. During that step, the platen temperature is sustained through the use of cooling water of 10-18 deg.C in the platen or pumping compression gas into the platen independently from the cooling water. The platen is sustained at a temperature of about 50 deg.C or below on the semiconductor substrate 200 and an aluminum layer 270 is deposited by a physical vapor deposition process. The semiconductor substrate 200 is then degassed at a temperature of 400-600 deg.C prior to the step for pumping the coolant and the aluminum layer 270 is subjected to reflow while sustaining the lower layer thereof, i.e., a wet layer 250, at a temperature of 50 deg.C or below.