| 摘要 |
PROBLEM TO BE SOLVED: To modify the material of a p-side electrode, to reduce a forward voltage and to improve the light-transmissivity by providing a layer made of Sb or an alloy containing Sb in the p-side electrode formed on a p-type gallium nitride compound semiconductor layer. SOLUTION: A semiconductor light-emitting device has a sapphire substrate 1 on which surface a GaN buffer layer 2, an n-type GaN layer 3, an n-type AlGaN layer 4, an In GaN active layer 5, a P-type AlGaN layer 6 and a p-type GaN layer 7 are formed in order. A predetermined pattern is formed on the surface of the p-type GaN layer 7 of this wafer, dry etching is performed from the p-type GaN layer 7 side, a part of the n-type GaN layer 3 is exposed and an n-type electrode 8 is formed on the surface. An Au-Sb alloy is evaporated on almost whose surface of the type GaN layer 7 to form a p-side electrode 9. A P-side bonding electrode 10 is formed on the p-side electrode 9. |
