发明名称 |
RESIST DEVELOPING METHOD BY MAGNETIC FIELD CONTROL, RESIST DEVELOPING EQUIPMENT, AND MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for improving uniformity of a resist profile developed in a semiconductor wafer surface. SOLUTION: Resist is spread on the base layer formed on a semiconductor substrate 10, and exposed to light. Alkaline developer is brought into contact with the resist. A resist pattern is formed by developing the resist while applying a magnetic field to the alkaline developer. The resist pattern is used as a mask, and a semiconductor device is manufactured by etching the base layer on the semiconductor substrate 10. |
申请公布号 |
JPH11186161(A) |
申请公布日期 |
1999.07.09 |
申请号 |
JP19980152793 |
申请日期 |
1998.06.02 |
申请人 |
TOSHIBA CORP |
发明人 |
AZUMA TSUKASA |
分类号 |
B05C11/08;B05D1/32;G03F7/30;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
B05C11/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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