发明名称 RESIST DEVELOPING METHOD BY MAGNETIC FIELD CONTROL, RESIST DEVELOPING EQUIPMENT, AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for improving uniformity of a resist profile developed in a semiconductor wafer surface. SOLUTION: Resist is spread on the base layer formed on a semiconductor substrate 10, and exposed to light. Alkaline developer is brought into contact with the resist. A resist pattern is formed by developing the resist while applying a magnetic field to the alkaline developer. The resist pattern is used as a mask, and a semiconductor device is manufactured by etching the base layer on the semiconductor substrate 10.
申请公布号 JPH11186161(A) 申请公布日期 1999.07.09
申请号 JP19980152793 申请日期 1998.06.02
申请人 TOSHIBA CORP 发明人 AZUMA TSUKASA
分类号 B05C11/08;B05D1/32;G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 B05C11/08
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