| 摘要 |
A thermoelectric element comprising a p-type semiconductor of a new siliconbase thermoelectric material, an n-type semiconductor forming a pn junction with the p-type semiconductor, and leads bonded with the semiconductors by bonding metal. The pn junction and the bonds between the semiconductor and leads are designed to produce high thermoelectromotive force. While any of Ag, Al and silver solder, or their alloy is used to make the bond between the silicon-base p-type semiconductor doped with some elements and the n-type semiconductor, any one of Zn, Ni, Cu, Ag and Au, or their alloy is used to bond the leads to the semiconductors, so that a high-efficiency thermoelectric element can be provided.
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