PROCESS FOR THE PREPARATION OF SINGLE CRYSTALS OF COMPOUND SEMICONDUCTORS, EQUIPMENT THEREFOR, AND SINGLE CRYSTALS OF COMPOUND SEMICONDUCTORS

摘要

A process for the preparation of single crystals of compound semiconductors MmXn (wherein M is a group 12 (2B) element or a group 13 (3B) element; X is a group 15 (5B) element or a group 16 (6B) element; and m and n are each an integer of 1 or above), which comprises the step (1) of introducing a vessel for crystal growth in which an element M is held and a gas containing an element X into a treatment chamber, the step (2) of melting the element M held in the vessel by heating, the step (3) of pressurizing the gas containing the element X to dissolve the gas in the melt of the element M, and the step (4) of growing a single crystal of a compound MmXn under the conditions of temperature and pressure regulated so as to fall within the region of the P-T phase diagram of the compound MmXn wherein the compound MmXn is stably present as solid by further pressuring the gas containing the element X with the melt of the element M containing the gas in a state dissolved therein being kept at a constant temperature.