| 摘要 |
<p>A method of etching comprising subjecting a material under plasma etching conditions to an etching composition comprising at least an etchant compound having the formula: CxHyFz wherein: x = 3, 4 or 5; 2x≥z≥y; and y+z=2x+2; and further including an etching composition which includes said etchant compound and a second material different from the etchant compound that enhances or modifies plasma etching.</p> |
