发明名称 |
Bipolartransistor und dessen Herstellungsverfahren |
摘要 |
A silicon film 9 and an N<+>-type impurity region 9a are provided between a base region 11 and an epitaxial growth layer 3. A silicon oxide film 12 is provided on the inner sidewalls of an opening 16, and an N-type polycrystalline silicon film 13 and an emitter region 15 are provided in the region surrounded by the silicon oxide film 12. The silicon film 9 is formed by means of a molecular beam epitaxy and the N-type impurity region 9a is formed prior to the formation of the base region 11 by means of ion implantation that uses a silicon oxide film 7 as the mask. As a result, it is possible to suppress the reduction in the cut-off frequency, and reduce the capacity between the base and the collector, so that a high speed operation of the bipolar transistor becomes possible. <IMAGE> |
申请公布号 |
DE69130598(T2) |
申请公布日期 |
1999.07.08 |
申请号 |
DE1991630598T |
申请日期 |
1991.09.02 |
申请人 |
NEC CORP., TOKIO/TOKYO, JP |
发明人 |
TAKEMURA, HISASHI, C/O NEC CORPORATION, MINATO-KU, TOKYO, JP |
分类号 |
H01L21/203;H01L21/331;H01L29/732;(IPC1-7):H01L29/732;H01L29/36;H01L29/08 |
主分类号 |
H01L21/203 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|