METHOD OF PRODUCING SILICON OXIDE FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DISPLAY, AND INFRARED IRRADIATING DEVICE

摘要

A method of producing a silicon oxide film, characterized by comprising forming a silicon oxide film by vapor phase deposition and irradiating the silicon oxide film with infrared radiation. Thus, a silicon oxide film of low quality produced at relatively low temperatures can be changed to one of high quality. A thin film semiconductor device of high operation reliability and high performance can be manufactured by such a method.