| 摘要 |
<p>A technique for forming a device pattern having constituent elements of a dense pattern (41c) and an isolated pattern (42c) on a wafer coated with photoresist. The wafer is exposed to light with half an appropriate exposure according to the photosensitive characteristics of the photoresist by using a first reticle having thereon a dense reticle pattern including a dense pattern (41a) corresponding to the dense pattern (41c), a pattern (42a) corresponding to the isolated pattern (42c), and auxiliary patterns (43a) additionally formed. Then the wafer is similarly exposed to light with half the appropriate exposure by using a second reticle having thereon a dense pattern (41b) corresponding to the dense pattern (41c) and an isolated pattern (42b) corresponding to the isolated pattern (42c).</p> |
