| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method of semiconductor device in which an isolation film is prevented from being broken by the secondary electrons of plasma in forming a metal film on an element fabricated on the surface of a semiconductor substrate. SOLUTION: Ti 6a is deposited by sputtering on a semiconductor substrate 10 where an element is formed on the surface thereof. The Ti 6a is deposited using a general DC magnetron sputtering system under conditions of Ar gas pressure of 1 mTorr and DC power of 4.4 kW. Under that deposition conditions, the Ti layer 6a is continuous in the initial deposition stage of 1 sec after starting discharge and local charge up is prevented even if the Ti layer 6a is charged with secondary electrons generated by sputtering plasma. A Ti layer 6a of about 300Åthick is formed on the entire surface by subsequent sputtering.
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