| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which can avoid deteriorating the static characteristics and improve the manufacturing yield by suppressing a p-type impurity introduced in a stripe part from diffusing into an n-type current restriction layer. SOLUTION: A real refractive index guide buried edge type AlGaInP semiconductor laser has a current restriction structure with an n-type current restriction layer 9 buried at both sides of a ridge stripe part. The restriction layer 9 has a part adjacent to the ridge stripe part which is an n-type (Alx2 Ga1-x2 )0.489 In0.511 Player 9a having a compression strain and lattice mismatch of about 2×10<-3> to an n-type GaAs substrate 1 and an upper part thereof is an n-type (Alx2 Ga1-x2 )0.561 In0.484 P layer 9b. The (Alx2 Ga1-x20.489 In511 P layer 9a has a band gap not less than that of p-type (Alx1 Ga1-x1 )0.516 In0.484 P clad layers 4, 6.
|
