SOI COMBINATION BODY TIE

摘要

An H-transistor (100), fabricated in a silicon-on-insulator ("SOI") substrate, includes opposing source and drain terminals or regions (104) flanking a centrally-located body node or well. Above the body node or well is formed the H-shaped gate terminal (112) of the transistor (100). One or more shunt body (108) contacts or ties bisect the source terminal (104) and connect the source terminal (104) of the transistor (100) to the underlying body node. In this way, the body node or well is no longer electrically "floating", but, instead, is connected to the fixed ground potential of the source terminal of the transistor (100).