发明名称 |
PRECLEANING STEP PRIOR TO METALLIZATION FOR SUB-QUARTER MICRON APPLICATION |
摘要 |
The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms. |
申请公布号 |
WO9934424(A1) |
申请公布日期 |
1999.07.08 |
申请号 |
WO1998US23353 |
申请日期 |
1998.11.02 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SUBRAHMANYAN, SUCHITRA;CHEN, LIANG-YUH;MOSELY, RODERICK, CRAIG |
分类号 |
C23C14/02;C23C16/02;H01L21/285;H01L21/302;H01L21/304;H01L21/3065;H01L21/768 |
主分类号 |
C23C14/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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