Kaskadierte Hochspannungsnetzwerkschaltung

摘要

The high current, high voltage transistor can be easily electrically stacked to extend the voltage range. It uses less silicon area than a conventional stacked transistor configuration. A configuration of field plates provides the greatest breakdown voltages with the highest ohmic values. A star-shaped field plate design provides the greatest breakdown voltages with the highest ohmic values. The field plate is constructed using several concentric rings connected by fingers that are wider towards the centre of the concentric rings and narrower towards the perimeter of the concentric rings.