| 摘要 |
<p>A novel passivation structure and its method of fabrication. According to the present invention a first dielectric layer (204) is formed upon a conductive layer formed over a substrate. The first dielectric layer (204) and the conductive layer are then patterned into a first dielectric capped interconnect (208) and a dielectric capped bond pad (206). Next, a second dielectric layer is formed over and between the dielectric capped interconnect (206) and the dielectric capped bond pad (208). The top portion of the second dielectric layer is removed so as to expose the dielectric capped bond pad (208) and the dielectric capped interconnect (206). A third dielectric layer (218) is then formed over the exposed dielectric capped bond pad and the exposed dielectric capped interconnect and over the second dielectric.</p> |
