Semiconductor component, e.g. DRAM, containing capacitor

摘要

The component has a semiconductor substrate (1) with an insulating film (59) deposited on its main surface extending from a memory cell to a peripheral circuit region. A lower capacitor electrode (170a) formed on the substrate main surface extends upwards on the side of the insulating film surface into the memory cell region. A top capacitor electrode (151) formed on the lower electrode over a dielectric layer extends to the top surface of the insulating film. A part of the lower capacitor electrode has top (301) and bottom (302) surfaces, between which an insulating film top surface is located.