| 摘要 |
On two active areas (13a, 13b) formed in a semiconductor substrate (12), source electrodes (14), gate electrodes (15), and drain electrodes (16) are disposed symmetrically to each other. A gate pad section (17) electrically connected to both gate electrodes (15) is disposed at one side of the active areas (13a, 13b), and a drain pad section (19) electrically connected to both drain electrodes (16) is disposed at the other side of the active areas (13a, 13b). A source pad section (19) electrically connected to one source electrode (14) is disposed at one side of the gate pad section (17) and the drain pad section (18), and a source pad section (19) electrically connected to the other source electrode (14) is disposed at the other side of the gate pad section (17) and the drain pad section (19). An input slot line (20) is formed between the gate pad section (17) and the source pad sections (19), and an output slot line (21) is formed between the drain pad section (18) and the source pad sections (19). <IMAGE> |
