发明名称 Sense amplifier with local write drivers
摘要 A sense amplifier for a very high density integrated circuit memory using CMOS technology is described. Each sense amplifier includes first and second local sense amplifier drive transistors, one (140) connecting the P channel transistors (112, 114) to VCC; the other (142) connecting the N channel transistors (142) to VSS. A read amplifier circuit (150-156) is provided within each sense amplifier and is operated by read control signals (DR, DRB, YR). Internal nodes of the latch of the sense amplifier are coupled by pass transistors (122, 124) that are responsive to column write control signals (YW). Local data write driver transistors (128, 130, 132, 134) are also provided to selectively couple the pass transistors to VCC-Vt or VSS in response to further data write control signals (DW, DWB). A relatively wider power line (184) is coupled to the drive transistors (140) to provide VCC thereto, and a narrower line (181) is used to control those first sense amplifier drive transistors (140). Corresponding wide and narrow lines (190, 186) are used for the second local sense amplifier drive transistors which couple the N channel transistors to ground. Each sense amplifier may be shared between first and second pairs of bit lines (220, 222; 224, 226) through the use of isolation transistors 232, 234, 238, 240) and a corresponding isolation signal (ISOL, ISOR). <IMAGE>
申请公布号 EP0852381(A3) 申请公布日期 1999.07.07
申请号 EP19980102694 申请日期 1993.09.30
申请人 UNITED MEMORIES, INC.;NIPPON STEEL SEMICONDUCTOR CORPORATION 发明人 HARDEE, KIM C.
分类号 G11C11/419;G11C7/06;G11C7/10;G11C11/401;G11C11/409;(IPC1-7):G11C7/06 主分类号 G11C11/419
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