| 摘要 |
<p>A method and an apparatus for fabrication of a specimen including a specific infinitesimal area of a specimen substrate such as a semiconductor wafer or a semiconductor device chip are disclosed. Extracted and separated from the specimen substrate by irradiation of an ion beam, the specimen is used in on observation, an analysis and/or a measurement of the specific infinitesimal area. First of all, the tip of a probe is firmly joined to the vicinity of an area to be observed on the specimen substrate which is mounted on a sample stage. Then, a micro-specimen including the area to be observed is separated from the specimen substrate. Firmly joined to the tip of the probe, the micro-specimen separated from the specimen substrate is then transferred to a specimen holder of an apparatus for carrying out an observation, an analysis and/or a measurement on the micro-specimen to be fixed to the specimen holder. Subsequently, the tip of the probe is separated from the micro-specimen fixed to the specimen holder. The tip of the probe is separated from the micro-specimen by adopting an ion-beam sputtering fabrication method. On the other hand, the tip of the probe is firmly joined to the vicinity of the area to be observed on the specimen substrate by adopting an ion-beam assist deposition film creation method. As a result, it is possible to obtain a specimen to be mounted on a specimen holder dedicated for an apparatus for carrying out an observation, an analysis and/or a measurement with a high degree of efficiency without doing manual work requiring much training such as grinding and dicing. <IMAGE></p> |
