发明名称 PROCESS FOR MANUFACTURING SEMICONDUCTOR WAFER, SEMICONDUCTOR CHIP, AND IC CARD
摘要 A manufacturing method includes the steps of integrally fabricating a plurality of circuit elements (41) on a substrate (1a), forming electrode bumps (11) on electrode pads (11b) conducting with circuit elements (41), forming a scribe line or a scribe line mark (21a) at a prescribed position of substrate (1a), and sticking an anisotropically conductive film (30) to cover each of the electrode bumps (11) and the scribe line or the scribe line mark (21a). The step of forming the electrode bumps (11) and the step of forming the scribe line or the scribe line mark (21a) are performed simultaneously. The electrode bumps (11) and the scribe line or the scribe line mark (21a) are preferably formed of gold. By the manufacturing method, even when an anisotropically conductive film is stuck on a semiconductor wafer having a plurality of circuit elements formed, the circuit elements can be diced as desired. <IMAGE>
申请公布号 EP0928016(A1) 申请公布日期 1999.07.07
申请号 EP19980929861 申请日期 1998.07.06
申请人 ROHM CO., LTD. 发明人 HIRAI, MINORU;UEDA, SHIGEYUKI;MIYATA, OSAMU;HORIO, TOMOHARU
分类号 B42D15/10;H01L21/02;H01L21/301;H01L21/60;H01L23/498;H01L23/544 主分类号 B42D15/10
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