发明名称 Magnetoresistance effect element
摘要 <p>There is provided a magnetoresistance effect element which is a multilayer structure body wherein a first magnetic film layer made of Ni-rich Ni-Co-Fe having a thickness of 10 to 100 ANGSTROM and a second magnetic film layer made of Co-rich Co-Ni-Fe having a thickness of 10 to 100 ANGSTROM , which are different from each other in coercive force, are integrally laminated with a non-magnetic metal film layer having a thickness of 10 to 100 ANGSTROM interposed therebetween. The non-magnetic metal film layer is of a metal, for example, Cu, Ag, Au, Pt, Ru or Re. (NiACo1-A)BFe1-B, NiAFe1-A or NiACo1-A is used as a material of the first magnetic film, and (CoCNi1-C)DFe1-D is used as a material of the second magnetic film.</p>
申请公布号 EP0498344(B2) 申请公布日期 1999.07.07
申请号 EP19920101727 申请日期 1992.02.03
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;SEISAN KAIHATSU KAGAKU KENKYUSHO;TDK CORPORATION;JAPAN ENERGY CORPORATION;NEC CORPORATION 发明人 SAKAKIMA, HIROSHI;SATOMI, MITSUO;TAKADA, TOSHIO;SHINJO, TERUYA
分类号 G01D5/14;G01D5/16;G01R33/09;G11B5/39;H01C10/00;H01F10/00;H01F10/08;H01F10/32;H01L43/10;(IPC1-7):G01D5/16;G01R33/06 主分类号 G01D5/14
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