| 摘要 |
In the state of stripping part of an outer peripheral portion of the wafer 2 electrostatically absorbed on the wafer platform 1 located in the vacuum vessel 8 with the half-lifting lift pin 4, ionizing the inert gas led in the vacuum vessel 8 through a UV ray applying unit 6, and stripping the part of the outer peripheral portion of the wafer 2 off the wafer platform 1 with the half-lifting lift pin 4, the UV ray applying unit 6 is operated to feed the ionized inert gas to between the wafer 2 and the wafer platform 1 for neutralizing the charges distributed on the rear surface of the wafer 2 and the top surface of the wafer platform 1, reducing the residual absorption, and easily stripping the wafer 2 off the wafer platform 1. <IMAGE> |
